電力電子技術(shù)：第1章 電力電子器件

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1、Power ElectronicsChapter 1Power Electronics Devices第一章 電力電子器件Outline 概覽概覽1.1 An introductory overview of power electronic devices 電力電子器件間接1.2 Power diode,GTR,power MOSFET 功率二極管，功率三極管，功率場效應(yīng)管1.3 Thyristor 晶閘管1.4 GTO,GCT 門極可關(guān)斷晶閘管，門極換流晶閘管1.5 IGBT,IPM 絕緣柵雙極型晶體管，智能功率模塊1.6 New devices 新型電力電子器件1.1 An introd

2、uctory overview of power electronic devices 電力電子器件總覽電力電子器件總覽 The concept and features 概念和特性 Configuration of systems using power electronic devices 由電力電子器件構(gòu)成系統(tǒng)的結(jié)構(gòu) Classifications 分類 The concept of power electronic devices電力電子器件概念電力電子器件概念 Power electronic devices:are the electronic devices that can b

3、e directly used in the power processing circuits to convert or control electric power.電力電子器件直接用于功率電路或控制電能。Power electronic devices=Power semiconductor devices 電力電子器件=功率半導(dǎo)體器件 Major material used in power semiconductor devicesSilicon 功率器件的主要材料是硅。Features of power electronic devices電力電子器件的特性電力電子器件的特性 T

4、he electronic power that power electronic device deals with is usually much larger than that the information electronic device does.電力電子器件通常比信息電子器件大得多。Usually working in switching states to reduce power losses.電力電子器件工作在開關(guān)狀態(tài)以較少損耗。On-stateVoltage across the device is 0Off-stateCurrent through the devi

5、ce is 0導(dǎo)通時器件電壓為0關(guān)斷時器件電流為0理想狀況下：理想狀況下：Features of power electronic devices Need to be controlled by information electronic circuits.Very often,drive circuits are necessary to interface between information circuits and power circuits.電力電子器件由信息電子電路控制（用弱電控制強(qiáng)電）。驅(qū)動電路是強(qiáng)電和弱點(diǎn)之間的紐帶。Dissipated power loss usual

6、ly larger than information electronic devices special packaging and heat sink are necessary.器件本身的功率損耗信息電子器件大得多，因此需要特殊封裝并加裝散熱片。Power losses on power semiconductordevices 功率損耗與電力半導(dǎo)體器件功率損耗與電力半導(dǎo)體器件 Total power loss on power semiconductor=conduction loss+turn-off loss+off-state loss+turn-on loss電力電子器件總損耗

7、電力電子器件總損耗=通態(tài)損耗通態(tài)損耗+斷態(tài)損耗斷態(tài)損耗+開通損耗開通損耗+關(guān)斷損耗關(guān)斷損耗開通損耗和關(guān)斷損開通損耗和關(guān)斷損耗合稱為開關(guān)損耗耗合稱為開關(guān)損耗Configuration of systems using powerelectronic devices 電力電子系統(tǒng)結(jié)構(gòu)電力電子系統(tǒng)結(jié)構(gòu) Power electronic system:Protection circuit is also very often used in power electronic system especially for the expensive power semiconductors.使用較昂貴的電

8、力電子器件時，需要加裝保護(hù)電路使用較昂貴的電力電子器件時，需要加裝保護(hù)電路Terminals of a power electronic device電力電子器件的端口電力電子器件的端口Control signal from drive circuit must be connected between the control terminal and a fixed power circuit terminal.控制信號來自驅(qū)動電路。控制信號接在控制端和主電路的一端。A classification of power electronic devices 電力電子器件分類電力電子器件分類 U

9、ncontrolled device:Power diode has only two terminals and can not be controlled by control signal.The on and off states of the device are determined by the power circuit.Half-controlled device:Thyristor is turned-on by a control signal and turned-off by the power circuit.Fully-controlled device:Powe

10、r MOSFET,IGBT,GTO,IGCT The on and off states of the device are controlled by control signals不控型器件：功率二極管不控型器件：功率二極管該類器件只有兩段并且不受控制。器件導(dǎo)通與否由主電路決定。該類器件只有兩段并且不受控制。器件導(dǎo)通與否由主電路決定。半控型器件：晶閘管半控型器件：晶閘管由控制信號觸發(fā)導(dǎo)通，但關(guān)斷需要借助主電路。由控制信號觸發(fā)導(dǎo)通，但關(guān)斷需要借助主電路。全控型器件全控型器件:功率功率MOSFET，IGBT，GTO，IGCT可通過控制信號，控制器件開通或者關(guān)斷可通過控制信號，控制器件開通或者關(guān)

11、斷Other classifications 其他分類方式其他分類方式Current-driven devices 電流驅(qū)動型Voltage-driven devices 電壓驅(qū)動型Unipolar devices 單極型Bipolar devices 雙極型Composite devices 復(fù)合型power electronic devicespower electronic devices1.2.1 Power diode 功率二極管功率二極管Appearance(外觀外觀)Structure(結(jié)構(gòu))Symbol(符號)Anode(陽極陽極)Cathode(陰極陰極)Cathode(陰極

12、陰極)Anode(陽極陽極)Junction capacitor 結(jié)電容結(jié)電容 The positive and negative charge in the depletion region is variable with the changing of external voltage.Junction capacitor CJ.耗盡區(qū)的正負(fù)電荷隨外電壓變化而變化，產(chǎn)生結(jié)電容。耗盡區(qū)的正負(fù)電荷隨外電壓變化而變化，產(chǎn)生結(jié)電容。Junction capacitor CJPotential barrier capacitor CBDiffusion capacitor CD結(jié)電容結(jié)電容CJ包括

13、勢壘電容包括勢壘電容CB和分散電容和分散電容CD Junction capacitor influences the switching characteristics of power diode.結(jié)電容的存在影響了功率二極管的開關(guān)特性結(jié)電容的存在影響了功率二極管的開關(guān)特性Static characteristics of power diode功率二極管的靜特性功率二極管的靜特性The I-V characteristic of power diode功率二極管的伏安特性曲線功率二極管的伏安特性曲線Switching(dynamic)characteristics of power dio

14、de 功率二極管的開關(guān)功率二極管的開關(guān)(動動)特性特性Turn-on transient(開通瞬態(tài))Forward recovery process:forward-recovery time正向恢復(fù)過程：正向恢復(fù)時間正向恢復(fù)過程：正向恢復(fù)時間Switching(dynamic)characteristics of power diodeTurn-off transient(關(guān)斷瞬態(tài))Reverse-recovery process:Reverse-recovery time,reverse-recovery charge,reverse-recovery peak current.反向恢復(fù)過

15、程：反向恢復(fù)過程：反向恢復(fù)時間，反向恢復(fù)電荷，反向恢復(fù)峰值電流反向恢復(fù)時間，反向恢復(fù)電荷，反向恢復(fù)峰值電流Specifications of power diode功率二極管的參數(shù)功率二極管的參數(shù)Average rectified forward current IT(AV)平均正向電流IT(AV)Forward voltage UF 正向電壓UFPeak repetitive reverse voltage URRM 可重復(fù)反向峰值電壓URRMMaximum junction temperature TJM 最大結(jié)溫TJMReverse-recovery time trr 反向恢復(fù)時間trr

16、Types of power diodes 功率二極管的種類功率二極管的種類General purpose diode(rectifier diode):standard recoveryFast recovery diode：Reverse recovery time and charge specified.trr is usually less than 1s,for many less than 100 ns ultra-fast recovery diode.Schottky diode(Schottky barrier diode-SBD)：A majority carrier d

17、evice Essentially no recovered charge,and lower forward voltage.Restricted to low voltage(less than 200V)快恢復(fù)二極管快恢復(fù)二極管:特殊的反向恢復(fù)時間和恢復(fù)電荷特殊的反向恢復(fù)時間和恢復(fù)電荷,通常通常trr少于少于1s,低于低于100ns的為超快恢復(fù)二極管的為超快恢復(fù)二極管肖特基二極管肖特基二極管(肖特基勢壘二極管肖特基勢壘二極管):-少數(shù)載流子器件少數(shù)載流子器件-沒有恢復(fù)電荷沒有恢復(fù)電荷,正向壓降更低正向壓降更低-只限于低壓只限于低壓(低于低于200V)普通二極管普通二極管(整流二極管整流二

18、極管):標(biāo)準(zhǔn)恢復(fù)標(biāo)準(zhǔn)恢復(fù)1.2.2 Giant TransistorGTR 巨型晶體管巨型晶體管 GTR is actually the bipolar junction transistor that can handle high voltage and large current.GTR實(shí)質(zhì)上是可用于高壓大電流的雙極晶體管實(shí)質(zhì)上是可用于高壓大電流的雙極晶體管Symbol(符號)Basic structure(基本結(jié)構(gòu))Structures of GTR different from itsinformation-processing counterpart 結(jié)構(gòu)上與信息處理三極管不同點(diǎn)結(jié)

19、構(gòu)上與信息處理三極管不同點(diǎn)Darlington configuration(達(dá)林頓結(jié)構(gòu))Physics of GTR operation GTR工作的物理原理工作的物理原理Same as information BJT device(與信息處理器件中的BJT相同)Static characteristics of GTRGTR的靜特性的靜特性Switching characteristics of GTRGTR的開關(guān)特性的開關(guān)特性Turn-on transient Turn-on delay time td Rise time tr Turn-on time tonTurn-off trans

20、ient Storage time ts Falling time tf Turn-off time toffSecond breakdown of GTRGTR的二次擊穿的二次擊穿Safe operating area(SOA)of GTRGTR的安全工作區(qū)的安全工作區(qū)1.2.3 Power metal-oxide-semiconductor field effect transistorPower MOSFETBasic structure(基本結(jié)構(gòu))Symbol(符號)N channelP channelN溝道溝道P溝道溝道Structures of power MOSFET功率場效應(yīng)管

21、的結(jié)構(gòu)功率場效應(yīng)管的結(jié)構(gòu)Multiple parallel cells-Polygon-shaped cellsA structure of hexagon cells多管胞并聯(lián)多管胞并聯(lián)-多邊形結(jié)構(gòu)胞多邊形結(jié)構(gòu)胞一種六邊形結(jié)構(gòu)管胞一種六邊形結(jié)構(gòu)管胞Static characteristics of power MOSFET功率場效應(yīng)管的靜特性功率場效應(yīng)管的靜特性Switching characteristics of power MOSFET 功率場效應(yīng)管的開關(guān)特性功率場效應(yīng)管的開關(guān)特性Turn-on transient(開通瞬態(tài))Turn-on delay time(開通延遲時間)td(o

22、n)Rise time(上升時間)trTurn-off transient(關(guān)斷瞬態(tài))Turn-off delay time(關(guān)斷延遲時間)td(off)Falling time(下降時間)tfSpecifications of power MOSFET功率場效應(yīng)管的參數(shù)功率場效應(yīng)管的參數(shù)Drain-source breakdown voltage UDS 漏源擊穿電壓UDSContinuous drain current ID 漏極持續(xù)電流IDPeak pulsed drain current IDM 漏極峰值電流IDMOn(On-state)resistance RDS(on)通態(tài)電阻RD

23、S(on)Inter-terminal capacitances 內(nèi)部端電容 Short circuit input capacitance Ciss=CGS+CGD 短路輸入電容Ciss=CGS+CGD Reverse transfer capacitance Crss=CGD 反向傳遞Crss=CGD Short circuit output capacitance Coss=CDS+CGD 短路輸出電容Coss=CDS+CGDSOA of power MOSFET 功率場效應(yīng)管的安全工作區(qū) No second breakdown 不存在二次擊穿Features and applicati

24、ons of power MOSFET 功率場效應(yīng)管的特性和應(yīng)用功率場效應(yīng)管的特性和應(yīng)用Voltage-driven device,simple drive circuit 電壓驅(qū)動型，驅(qū)動電路簡單Majority-carrier device,fast switching speed,high operating frequency(could be hundreds of kHz)多數(shù)載流子器件，開關(guān)速度高，工作頻率高（可達(dá)幾百千Hz）Better thermal stability 更好的溫度穩(wěn)定性O(shè)n-resistance increases rapidly with rated bl

25、ocking voltage 通態(tài)電阻隨額定阻斷電壓升高而急劇升高 Usually used at voltages less than 500V and power less than 10kW 通常電壓低于500V，功率低于10KW 1000V devices are available,but are useful only at low power levels(100W)對于1000V的器件，只能工作在低功率工況下The body diode of power MOSFET功率場效應(yīng)管的體二極管功率場效應(yīng)管的體二極管The body diode(體二極管)Equivalent cir

26、cuit(等效電路)1.3.1 Thyristor 晶閘管晶閘管History：Another name:SCRsilicon controlled rectifier 另一種稱法：SCR-可控硅整流器 Thyristor Opened the power electronics era 晶閘管開辟了電力電子的新紀(jì)元 1956,invention,Bell Laboratories 1957,development of the 1st product,GE 1958,1st commercialized product,GE Thyristor replaced vacuum devices

27、 in almost every power processing area.Still in use in high power situation.Thyristor till has the highest power-handling capability.在大功率場合下，(相比其它器件)晶閘管具有最大的功率控制能力。Appearance and symbol of thyristor晶閘管的外觀和符號晶閘管的外觀和符號Appearance(外觀)Symbol(符號)CathodeGateAnodeStructure and equivalent circuit of thyristo

28、r 晶閘管的結(jié)構(gòu)和等效電路晶閘管的結(jié)構(gòu)和等效電路 Structure(結(jié)構(gòu))Equivalent circuit(等效電路)Physics of thyristor operation晶閘管工作的物理原理晶閘管工作的物理原理 Equivalent circuit:A pnp transistor and an npn transistor interconnected together Positive feedback Trigger Can not be turned off by control signal Half-controllable等效電路：一個等效電路：一個pnp晶體管于一

29、個晶體管于一個npn晶體管相互連晶體管相互連接而成接而成正反饋正反饋觸發(fā)脈沖觸發(fā)脈沖不能由門及信號不能由門及信號控制關(guān)斷控制關(guān)斷半控型器件半控型器件Quantitative description of thyristor operation 定量描述晶閘管的工作過程定量描述晶閘管的工作過程 When IG=0,1+2 is small.When IG0,1+2 will approach 1,IA will be very large.Other methods to trigger thyristor on導(dǎo)致晶閘管觸發(fā)的其他原因?qū)е戮чl管觸發(fā)的其他原因 High voltage acro

30、ss anode and cathode avalanche breakdown 陰極和陽極之間的高電壓導(dǎo)致雪崩擊穿 High rising rate of anode voltagedu/dt too high 陽極電壓上升率過快 High junction temperature 結(jié)溫過高 Light activation 光激活Static characteristics of thyristor晶閘管的靜特性晶閘管的靜特性(伏安特性）伏安特性）Static characteristics of thyristorBlocking when reverse biased,no matte

31、r if there is gate current applied.反向偏置時不論又沒有門極脈沖，晶閘管都處于截止?fàn)顟B(tài)。Conducting only when forward biased and there is triggering current applied to the gate.只有正向偏置并受到門極觸發(fā)脈沖時才會導(dǎo)通。Once triggered on,will be latched on conducting even when the gate current is no longer applied.一旦導(dǎo)通后，去掉門極觸發(fā)電流后，晶閘管依舊處于導(dǎo)通狀態(tài)。Turnin

32、g off:decreasing current to be near zero with the effect of external power circuit.關(guān)斷：當(dāng)外電源使晶閘管的電流減小到近零時刻。Switching characteristics of thyristor晶閘管的開關(guān)特性晶閘管的開關(guān)特性Turn-on transient Delay time td Rise time tr Turn-on time tgtTurn-off transient Reverse recovery time trr Forward recovery time tgr Turn-off

33、time tq導(dǎo)通瞬態(tài)：導(dǎo)通瞬態(tài)：-延遲時間延遲時間td-上升時間上升時間tr-開通時間開通時間tgt 關(guān)斷瞬態(tài)：關(guān)斷瞬態(tài)：-反向恢復(fù)時間反向恢復(fù)時間trr-正向恢復(fù)時間正向恢復(fù)時間tgr-關(guān)斷時間關(guān)斷時間tqSpecifications of thyristor 晶閘管的參數(shù)晶閘管的參數(shù)Peak repetitive forward blocking voltage UDRM 可重復(fù)正向阻斷峰值電壓UDRMPeak repetitive reverse blocking voltage URRM 可重復(fù)反向阻斷峰值電壓URRM Peak on-state voltage UTM 通態(tài)峰值電壓

34、UTMAverage on-state current IT(AV)通態(tài)平均電流IT(AV)Holding current IH 持續(xù)電流IHLatching up current IL 門檻電流ILPeak forward surge current ITSM 正向浪涌電流峰值Idu/dtdi/dt1.3.2 The family of thyristors 晶閘管家族晶閘管家族Fast switching thyristorFSTTriode AC switchTRIAC(Bi-directional triode thyristor)Reverse-conducting thyristo

35、rRCTLight-triggered(activited)thyristorLTT1.4.1 Gate-turn-off thyristorGTO 門極可關(guān)斷晶閘管門極可關(guān)斷晶閘管 Structure(結(jié)構(gòu)結(jié)構(gòu))Symbol(符號符號)Major difference from conventional thyristor:The gate and cathode structures are highly interdigitated,with various types of geometric forms being used to layout the gates and catho

36、des.與晶閘管的主要不同點(diǎn)：與晶閘管的主要不同點(diǎn)：門極和陰極互相交叉，并有多種幾何結(jié)構(gòu)布局門極和陰極互相交叉，并有多種幾何結(jié)構(gòu)布局Physics of GTO operation GTO工作的物理原理工作的物理原理GTO的基本工作原理與傳統(tǒng)晶閘管相同。的基本工作原理與傳統(tǒng)晶閘管相同。在結(jié)構(gòu)上的主要區(qū)別使在結(jié)構(gòu)上的主要區(qū)別使GTO具有關(guān)斷能力：具有關(guān)斷能力：-更大的更大的2-1+2只比只比1略大一點(diǎn)略大一點(diǎn)-更短的門極和陰極距離使可以從門極抽出電流成為更短的門極和陰極距離使可以從門極抽出電流成為可能可能Static Characteristics of GTOGTO的靜態(tài)特性的靜態(tài)特性Stat

37、ic characteristic Identical to conventional thyristor in the forward direction靜態(tài)特性：靜態(tài)特性：-正向特性與傳統(tǒng)晶閘管一致正向特性與傳統(tǒng)晶閘管一致Switching Characteristics of GTOGTO的動態(tài)特性的動態(tài)特性Switching characteristic開關(guān)特性開關(guān)特性Turn on Turn offSpecifications of GTOGTO的參數(shù)的參數(shù)Most GTO specifications have the same meanings as those of conve

38、ntional thyristor.Specifications different from thyristors Maximum controllable anode current IATO Current turn-off gain boff Turn-on time ton Turn-off time toff大多數(shù)大多數(shù)GTO參數(shù)與傳統(tǒng)晶閘管特性相同參數(shù)與傳統(tǒng)晶閘管特性相同與晶閘管參數(shù)的不同：與晶閘管參數(shù)的不同：-最大可控陽極電流最大可控陽極電流IATO-電流關(guān)斷增益電流關(guān)斷增益boff-開通時間開通時間ton-關(guān)斷時間關(guān)斷時間toff表1-2 4.5KV/4KA 不對稱GTO主要

39、特性額定最大值UDRMURRMITGQMITAVMITSM-4500V17V4000A1000A40000A（1ms）-開關(guān)特性開通時間關(guān)斷時間diT/dtduT/dtdiG1/dtdiG2/dttd=2.5str=5.0sts=25.0stf=3.0s500A/s1000V/s40A/s40A/s開通電壓當(dāng)IT=4000A時Uon=4.4V器件型號：5SGA40L4501（ABB）Specifications of GTOGTO的參數(shù)的參數(shù)1.4.2 Gate-commutated thyristorGCT 門極換流晶閘管門極換流晶閘管The newest member of the pow

40、er semiconductor family,introduced in 1997 by ABB.電力電子器件家族中的最新一員，由ABB公司在1997年研制。Actually the close integration of GTO and the gate drive circuit with multiple MOSFETs in parallel providing the gate currents.集成了GTO和多MOSFET并聯(lián)結(jié)構(gòu)的門極驅(qū)動電路，有較大的驅(qū)動電流。Conduction drop,gate driver loss,and switching speed are s

41、uperior to GTO.導(dǎo)通壓降、門極驅(qū)動和開關(guān)速度都優(yōu)于GTO。Competing with IGBT and other new devices to replace GTO.與IGBT和其他新型器件一共有取代GTO的趨勢。類型反相并聯(lián)二極管阻斷電壓6000V GCT應(yīng)用不對稱型GCT不包含UDRMUDRM=6000VURRM=22V用于有反并聯(lián)二極管的電壓型變換器逆導(dǎo)型GCT包含URRM0UDRM=6000V用于電壓型變換器對稱型GCT（反相阻斷）不需要URRMUDRMUDRM=6000VURRM=6500V用于電流型變換器1.4.2 Gate-commutated thyrist

42、orGCT 門極換流晶閘管門極換流晶閘管表1-3 GCT的分類表1-4 6KV/6KA不對稱GCT的主要特性額定最大值UDRMURRMITGQMITAVMITSM-6000V22V6000A2000A50000A-開關(guān)特性開通時間關(guān)斷時間diT/dtduT/dtdiG1/dtdiG2/dttd1.0str2.0sts3.0stf N/A1000A/s3000V/s200A/s10A/s開通電壓當(dāng)IT=6000A時Uon4V器件型號：FGC6000AX120DS（Mitsubishi）1.4.2 Gate-commutated thyristorGCT 門極換流晶閘管門極換流晶閘管1.5.1 I

43、nsulated-gate bipolar transistorIGBT 絕緣柵雙極型晶體管絕緣柵雙極型晶體管 Combination of MOSFET and GTR (結(jié)合了MOSFET與GTR的優(yōu)點(diǎn))GTR:low conduction losses(especially at larger blocking voltages),longer switching times,current-drivenMOSFET:faster switching speed,easy to drive(voltage-driven),larger conduction losses(especial

44、ly for higher blocking voltages)IGBTGTR:低導(dǎo)通損耗低導(dǎo)通損耗(尤其阻斷大電壓時尤其阻斷大電壓時)，開關(guān)時間較長，電流驅(qū)動，開關(guān)時間較長，電流驅(qū)動MOSFET：較高的開關(guān)速度，容易驅(qū)動：較高的開關(guān)速度，容易驅(qū)動(電壓驅(qū)動型電壓驅(qū)動型)，較高的導(dǎo)通損，較高的導(dǎo)通損耗（尤其阻斷高壓時）耗（尤其阻斷高壓時）Features and application 特性和應(yīng)用特性和應(yīng)用Features：On-state losses are much smaller than those of a power MOSFET,and are comparable with

45、those of a GTR Easy to drive similar to power MOSFET Faster than GTR,but slower than power MOSFETApplication：The device of choice in 500-3300V applications,at power levels of several kW to several MW特性：特性：導(dǎo)通損耗遠(yuǎn)低于功率導(dǎo)通損耗遠(yuǎn)低于功率MOSFET，與，與GTR相媲美。相媲美。容易驅(qū)動容易驅(qū)動-與與MOSFET相似相似比比GTR開關(guān)速度更快，但是比開關(guān)速度更快，但是比MOSFET慢慢應(yīng)用

46、：從應(yīng)用：從500V到到3300V都有應(yīng)用，容量從幾千瓦到幾兆瓦都有應(yīng)用，容量從幾千瓦到幾兆瓦Structure and operation principle of IGBTIGBT的結(jié)構(gòu)和工作原理的結(jié)構(gòu)和工作原理Basic structure(基本結(jié)構(gòu))Also multiple cell structureBasic structure similar to power MOSFET,except extra p regionOn-state:minority carriers are injected into drift region,leading to conductivity

47、modulationcompared with power MOSFET:slower switching times,lower on-resistance,useful at higher voltages同為多管胞結(jié)構(gòu)同為多管胞結(jié)構(gòu)除了額外的除了額外的p區(qū)之外，基本結(jié)構(gòu)與功率區(qū)之外，基本結(jié)構(gòu)與功率MOSFET相似相似導(dǎo)通：少子注入漂移區(qū)導(dǎo)電導(dǎo)通：少子注入漂移區(qū)導(dǎo)電與功率與功率MOSFET相比：開關(guān)時間相對相比：開關(guān)時間相對較長，低通態(tài)電阻，可應(yīng)用于高壓較長，低通態(tài)電阻，可應(yīng)用于高壓Equivalent circuit and circuit symbol of IGBT IGBT的符號和

48、等效電路的符號和等效電路Equivalent circuit(等效電路)Symbol(符號)Static characteristics of IGBTIGBT的靜特性的靜特性Switching characteristics of IGBTIGBT的開關(guān)特性的開關(guān)特性IGBT turn-on is similar to power MOSFET turn-onIGBT開同時與功率開同時與功率MOSFET相似相似The major difference between IGBT turn-off and power MOSFET turn-off:There is current tailin

49、g in the IGBT turn-off due to the stored charge in the drift region.IGBT關(guān)斷時與功率關(guān)斷時與功率MOSFET的主的主要區(qū)別是：要區(qū)別是：-由于漂移區(qū)存儲電荷使由于漂移區(qū)存儲電荷使IGBT在關(guān)在關(guān)斷時產(chǎn)生拖尾電流斷時產(chǎn)生拖尾電流Parasitic thyristor and latch-up in IGBTIGBT的寄生晶閘管和擎住效應(yīng)的寄生晶閘管和擎住效應(yīng)Location of equivalent devices Complete IGBT equivalent circuit (等效器件位置)(完整的IGBT等效電路)

50、Main current path pnp transistor and the parasitic npn transistor compose a parasitic thyristor inside IGBT.High emitter current tends to latch the parasitic thyristor on.Modern IGBTs are essentially latch-up proof-通過主要電流的通過主要電流的pnp晶體管和寄生的晶體管和寄生的npn晶體管在晶體管在IGBT內(nèi)構(gòu)成了一個晶閘管結(jié)構(gòu)。內(nèi)構(gòu)成了一個晶閘管結(jié)構(gòu)。-較高的發(fā)射極電流使寄生晶閘管

51、觸發(fā)導(dǎo)通。較高的發(fā)射極電流使寄生晶閘管觸發(fā)導(dǎo)通。-現(xiàn)代的現(xiàn)代的IGBT已經(jīng)消除了這種擎住效應(yīng)已經(jīng)消除了這種擎住效應(yīng)Specifications of IGBTIGBT的參數(shù)的參數(shù)Collector-emitter breakdown voltage UCES 集-射擊穿電壓UCESContinuous collector current IC 持續(xù)集電極電流ICPeak pulsed collector current ICM 集電極脈沖電流峰值ICMMaximum power dissipation PCM 最大耗散功率PCMOther issues:SOA of IGBT The IGBT

52、 has a rectangular SOA with similar shape to the power MOSFET.IGBT的安全工作區(qū)：-IGBT安全工作區(qū)為矩形，形狀與功率MOSFET安全工作區(qū)相似Usually fabricated with an anti-parallel fast diode 通常有反并聯(lián)二極管Specifications of IGBTIGBT的參數(shù)的參數(shù)表1-5 3.3KV/1.2KA IGBT的主要特性額定最大值UCEICICM-3300V1200A2400A-開關(guān)特性tdontrTdoffTf0.35s 0.27s1.7s0.2s飽和電壓當(dāng)IC=12

53、00A時ICEsat=4.3V器件型號：FZ1200R33KF2（Eupec）1.5.2 Intelligent Power ModuleIPM 智能功率模塊智能功率模塊IPM框圖框圖IPM=IGBT+驅(qū)動電路驅(qū)動電路+保護(hù)電路保護(hù)電路Comparison of power electronic devices1.6 New devices 新型器件新型器件SiC devices-high temperature-high voltageGaAs devices-high temperatureInP devices-ultra high frequency碳化硅器件碳化硅器件-耐高溫耐高溫-耐高壓耐高壓砷化鎵器件砷化鎵器件-耐高溫耐高溫磷化銦器件磷化銦器件-超高頻超高頻Summary 小結(jié)小結(jié) 本章介紹了主要電力電子器件的基本結(jié)構(gòu)、工作原理和特性、參數(shù)計(jì)算以及應(yīng)用場合 電力電子器件的分類有很多種，主要的分類方法可分為不可控型、半控型和全控型。另外，電力電子器件也可分為單極型、雙極型和復(fù)合型。隨著材料技術(shù)的進(jìn)步，出現(xiàn)了很多新型器件 HomeworkP41:1.4,1.7,1.8