東南大學電子器件金半接觸.ppt
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acceptor受主donor施主recombination復合majority多子minority少子transitionregion過渡區(qū)depletionregion耗盡區(qū)contactbarrier接觸勢壘p-njunctionpn結(jié)heterojunction/異質(zhì)結(jié)EHP電子空穴對homojunction/同質(zhì)結(jié),Schottkybarrier/肖特基勢壘barrierheight/勢壘高度ideal/理想的workfunction/功函數(shù)practical/實際的electronaffinity/電子親和能Fermilevel/費米能級rectifier/整流器electrostaticpotential/靜電勢breakdown/擊穿rectifyingcontacts/整流接觸Ohmiccontacts/歐姆接觸surfacestate/表面態(tài)lattice-matched/晶格匹配的tunnelingeffect/隧道效應,半導體器件工作的基本方程,,泊松方程,電流密度方程,電流連續(xù)性方程,Manyoftheusefulpropertiesofap-njunctioncanbeachievedbysimplyforminganappropriatemetal-semiconductor(MS)contact.,5.7Metal-Semiconductorjunctionsorcontacts(金屬-半導體結(jié)、金-半接觸）,5.7.1SchottkyBarriers,http://en.wikipedia.org/wiki/Walter_H._Schottky,Possibly,inretrospect,Schottkysmostimportantscientificachievementwastodevelop(in1914)thewell-knownclassicalformula,nowwritten-q2/4πε0 x,fortheinteractionenergybetweenapointchargeqandaflatmetalsurface,whenthechargeisatadistancexfromthesurface.Owingtothemethodofitsderivation,thisinteractioniscalledthe"imagepotentialenergy"(imagePE).Schottkybasedhisworkonearlierworkby(Lord)KelvinrelatingtotheimagePEforasphere.SchottkysimagePEhasbecomeastandardcomponentinsimplemodelsofthebarriertomotion,M(x),experiencedbyanelectrononapproachingametalsurfaceorametal-semiconductorinterfacefromtheinside.,1.Schottkyeffect,(TheimagePEisusuallycombinedwithtermsrelatingtoanappliedelectricfieldFandtotheheighth(intheabsenceofanyfield)ofthebarrier.Thisleadstothefollowingexpressionforthedependenceofthebarrierenergyondistancex,measuredfromthe"electricalsurface"ofthemetal,intothevacuumorintothesemiconductor:Here,eistheelementarypositivecharge,ε0istheelectricconstantandεristherelativepermittivityofthesecondmedium(=1forvacuum).Inthecaseofametal-semiconductorjunction,thisiscalledaSchottkybarrier;inthecaseofthemetal-vacuuminterface,thisissometimescalledaSchottky-Nordheimbarrier.Inmanycontexts,hhastobetakenequaltothelocalworkfunctionφ.ThisSchottky-Nordheimbarrier(SNbarrier)hasplayedinimportantroleinthetheoriesofthermionicemissionandoffieldelectronemission.Applyingthefieldcausesloweringofthebarrier,andthusenhancestheemissioncurrentinthermionicemission.Thisiscalledthe"Schottkyeffect",andtheresultingemissionregimeiscalled"Schottkyemission".,Theworkfunction(功函數(shù)):TheenergywiththeworkfunctionisrequiredtoremoveanelectronattheFermileveltothevacuumoutsidethemetal.(Al=4.3eV)theelectronaffinity(電子親和能):Theenergywiththeelectronaffinityisrequiredtoremoveanelectronatthebottomoftheconductionbandtothevacuumoutsidethesemiconductors.(Si=4.1eV),,,,,,Foursetsofcombination:(1)metal-ntypesemiconductor,q?m>q?s(2)metal-ntypesemiconductor,q?mq?s(4)metal-ptypesemiconductor,q?mq?sMetal/n-typesemiconductor,,2.Schottkybarriers（肖特基勢壘）,chargetransferoccursuntiltheFermilevelsalignatequilibrium,theelectrostaticpotentialofthesemiconductormustberaisedV0theelectronenergymustbelowered.–qV0thedepletionregionisformednearthejunction.Contactpotentialbarrier:qV0=q?m-q?spotentialbarrierheightq?B=q?m-q?,ΦBiscalledSchottkybarrier,（2）Metal/ptypesemiconductor,q?m
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